If made with deep-sub-micron CMOS then the first voltage peak would blow the gate oxide. You might get away with it with SiGe. The rule is the deeper the junction the more hit it can take. That's why E.S.D. diodes are NWELL to substrate.

I'm using Hall-effect devices, very cheap, to detect the locomotives which have little magnets glued underneath on my model railway.

The per-unit-length inductance can be raised with a spiral central conductor in a coax. Is that not used in some high impedance 'scope probes? Lumped-constant lines can be made whatever you want, such as distributed Y-amplifiers in old Tektronix valve oscilloscopes.